Description

Description:
300nm thick cubic silicon carbide (3C-SiC) grown on a single side polished standard Si(100) substrate by reduced pressure chemical vapour deposition.

Specifications:
Epilayer: 3C-SiC; Epilayer thickness: 300nm; Doping: undoped; Dopant: NA

Substrate: Si; Orientation: (100); Offcut: 0 deg; Doping: p- (B); Resistivity: 1-20 Ohm cm; Thickness: 525 um; Diameter: 100mm