3C-SiC Epitaxial Growth
Advanced Epi offers cubic silicon carbide (3C-SiC) epilayer grown on several different silicon substrates for various applications. Unless otherwise requested, epi wafers are packaged under cleanroom conditions without any additional characterisation techniques.
If requested, Advanced Epi offers a number of non-destructive and destructive characterisation processes including: FTIR thickness mapping, wafer bow measurements, AFM surface roughness mapping, 4-point probe resistance mapping, HR-XRD, SEM and TEM.
Substrates can be requested with the following parameters or in certain cases non-standard substrates can be supplied from customers:
|Material||Wafer Diameter (mm)||Orientation||Thickness (microns)||Offcut (degrees)||Doping type|
|Silicon||100,150||(100), (111)||350-1000||0-4||n-, p-, n+, p+, FZ|
3C-SiC epilayers can be grown at various thickness, typically between 50 nm - 1 µm and be unintentionally doped or n-type doped.
The table on the right shows the typical parameters for 300 nm of 3C-SiC epitaxially grown on standard 675 micron thick 150 mm Si substrates.
|Thickness Uniformity (SD/mean)||1%||1%|
|Wafer Bow (microns)||<50||<50|
|RMS Surface Roughness (nm)||<3||<3|
Advanced Epi can supply customers with prototype 3C-SiC membranes for evaluation purposes. Membranes can be fabricated from 3C-SiC epilayers as thin as 25 nm and above. Membrane sizes can range from hundreds of microns up to several millimetres.
We are working closely semiconductor membrane manufacturers in order to offer these products on a fully commercial basis.
For more information regarding 3C-SiC membranes, please contact us.
Group IV Epitaxy
Advanced Epi offer epitaxy services for a range of group IV based semiconductors and alloys including:
- Si1-xGex, Si1-xBx, Ge1-xSnx alloys
Epilayers can be grown on substrate sizes including 100, 150 and in certain cases 200 mm and doping profiles can be varied across many of the structures.
For more information on the materials available and their properties please contact us.
Advanced Epi can provide data of grown epi wafers utilising a range of characterisation techniques. Non-destructive techniques which can be carried out at wafer scale include AFM surface roughness, FTIR thickness uniformity and wafer bow mapping. More in depth characterisation can be performed using SEM, TEM, Raman techniques as well as electrical characterisation including temperature dependent Hall effect and resistivity measurements.
4H-SiC epitaxial growth
Advanced Epi has partnered with a UK based University to offer low volume 4H-SiC homoepitaxial wafer. 4H-SiC epilayers can be grown up to 10's or even 100's of microns with p-type or n-type dopants.
For more information on this new capability please contact us.