Advanced Epi is a UK based supplier of epitaxial materials and offers in-depth material characterisation services. We supply a range of group IV semiconductor thin films including 3C-SiC, Si, Ge, SiGe and GeSn grown on substrates up to 200 mm diameter.
We can supply small quantities of epi wafers for evaluation purposes, R&D and niche applications as well as larger batches for high volume production. Our tailored epitaxy service ensures we work towards your exact specifications, supplying material to suit your needs.
Advanced Epi offer 3C-SiC epi wafers grown on 100 and 150 mm silicon substrates. A range of parameters can be tailored for particular applications.
We are developing a range of different 3C-SiC based devices and always happy to prototype additional devices depending on customer requirements.
Silicon carbide possesses unique properties making it ideal for a range of devices including harsh environment sensors and high voltage power electronics. Advanced Epi is developing its unique 3C-SiC material for these applications and has various prototype devices ready for initial evaluation.
Advanced Epi offers Group IV epitaxy services and can supply materials including silicon, germanium as well as SiGe, SiB and GeSn alloys.
We offer a large number of techniques to characterise material and devices including TEM, SEM, XRD, AFM, FTIR, 4PP and many more...
Advanced Epi can provide a range of material characterisation data on grown epi wafers using a range of destructive and non-destructive techniques including but not limited to FTIR thickness uniformity mapping, AFM surface morphology, X-ray diffraction, SEM, TEM and electrical characterisation.
Advanced Epi's core focus is silicon carbide (SiC) heteroepitaxy. Using our unique patented technology, we are able to grow thin films of cubic silicon carbide (3C-SiC) on standard silicon substrates using traditional RP-CVD growth systems found within the silicon industry. Not only can we offer 3C-SiC/Si at low cost but the process can be fully integrated into current foundries and be scaled up to high volumes and wafer sizes.
The material is suitable for a range of applications:
- Sensors for harsh environments (high temperature, thermal shocks, vibrations, corrosive and toxic, high levels of radiation...)
- Virtual substrates for the growth of gallium nitride and graphene
- Biomedical devices and coatings
- Power electronics
- Thermal Management for existing silicon and compound semiconductor based devices
We are happy to supply small quantities of wafers for evaluation purposes as well as larger batches for high volume production. We offer a range of standard epi wafers which can be found here however, we are also happy to work towards your exact material specifications.