Advanced Epi is a UK based supplier of epitaxial materials and offers in-depth material characterisation services. We supply a range of group IV semiconductor thin films including 3C-SiC, Si, Ge, SiGe and GeSn grown on substrates up to 200 mm diameter.
We can supply small quantities of epi wafers for evaluation purposes, R&D and niche applications as well as larger batches for high volume production. Our tailored epitaxy service ensures we work towards your exact specifications, supplying material to suit your needs.
Advanced Epi's core focus is silicon carbide (SiC) heteroepitaxy. Using our unique patented technology, we are able to grow thin films of cubic silicon carbide (3C-SiC) on standard silicon substrates using traditional RP-CVD growth systems found within the silicon industry. Not only can we offer 3C-SiC/Si at low cost but the process can be fully integrated into current foundries and be scaled up to high volumes and wafer sizes.
The material is suitable for a range of applications:
- Sensors for harsh environments (high temperature, thermal shocks, vibrations, corrosive and toxic, high levels of radiation...)
- Virtual substrates for the growth of gallium nitride and graphene
- Biomedical devices and coatings
- Power electronics
- Thermal Management for existing silicon and compound semiconductor based devices
We are happy to supply small quantities of wafers for evaluation purposes as well as larger batches for high volume production. We offer a range of standard epi wafers which can be found here however, we are also happy to work towards your exact material specifications.