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Advanced Epi is a UK based supplier of epitaxial materials and offers in-depth material characterisation services. We supply a range of group IV semiconductor thin films including 3C-SiC, Si, Ge, SiGe and GeSn grown on substrates up to 200 mm diameter.

We can supply small quantities of epi wafers for evaluation purposes, R&D and niche applications as well as larger batches for high volume production. Our tailored epitaxy service ensures we work towards your exact specifications, supplying material to suit your needs.

3C-SiC Growth

Advanced Epi's core technology enables the growth of high quality 3C-SiC films on silicon substrates using standard CVD growth processes found in the semiconductor industry reducing cost, minimising thermal stress and increasing wafer size and volumes.

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3C-SiC Devices

Silicon carbide possesses unique properties making it ideal for a range of devices including harsh environment sensors and high voltage power electronics. Advanced Epi is developing its unique 3C-SiC material for these applications and has various prototype devices ready for initial evaluation.

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Silicon epitaxy

Advanced Epi can also supply and develop a range of group IV semiconductor materials including silicon as well as SiGe, Si1-xCx, Si1-xBx and Ge1-xSnx alloys which can be grown on 100, 150 and 200 mm substrates. Selective epitaxy and a range of doping options are available.

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Characterisation

Advanced Epi can provide a range of material characterisation data on grown epi wafers using a range of destructive and non-destructive techniques including but not limited to FTIR thickness uniformity mapping, AFM surface morphology, X-ray diffraction, SEM, TEM and electrical characterisation.

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About us

Advanced Epi's core focus is silicon carbide (SiC) heteroepitaxy. Using our unique patented technology, we are able to grow thin films of cubic silicon carbide (3C-SiC) on standard silicon substrates using traditional RP-CVD growth systems found within the silicon industry. Not only can we offer 3C-SiC/Si at low cost but the process can be fully integrated into current foundries and be scaled up to high volumes and wafer sizes.

The material is suitable for a range of applications:

  • Sensors for harsh environments (high temperature, thermal shocks, vibrations, corrosive and toxic, high levels of radiation...)
  • Virtual substrates for the growth of gallium nitride and graphene
  • Biomedical devices and coatings
  • Power electronics
  • Thermal Management for existing silicon and compound semiconductor based devices

We are happy to supply small quantities of wafers for evaluation purposes as well as larger batches for high volume production. We offer a range of standard epi wafers  which can be found here however, we are also happy to work towards your exact material specifications.