New Stock of SiGe epilayers

Strained Silicon Germanium alloy (SiGe) epi wafers have been added to our online stocklist and are ready for immediate dispatch. The SiGe epilayers have a Ge concentration of 25% and are fully strained to the underlying silicon (100) substrates giving extremely high crystal quality and low surface roughness. The epi wafers are 150mm diameter providing a high volume of material for research and development projects.