Advanced Epi have recently partnered with a UK based University to offer homoepitaxial growth of 4H-SiC epilayers on on-axis or off-axis 100mm diameter 4H-SiC substrates. Epilayers can be grown to a thickness of 10’s or even 100’s of microns and can be doped using Al (p-type) or N (n-type).

There is also an opportunity for customers to collaborate with researchers at the University on the epitaxial growth or power fabrication processes.

For more information please contact us.