SiGe40%/Si(100) (relaxed)

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Description

Description:
2um constant composition SiGe40% grown on a 4um thick linearly graded SiGe buffer grown on a single side polished standard Si(100) substrate by reduced pressure chemical vapour deposition.

Specifications:
Epilayer: SiGe40%; Epilayer thickness: 2um; Doping: undoped; Dopant: NA
Buffer: Strain relaxed buffer, linearly graded from Si to SiGe40% over 4um

Substrate: Si; Orientation: (100); Offcut: 0 deg; Doping: n- (Ph); Resistivity: 1-10 Ohm cm; Thickness: 525 um; Diameter: 100mm

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