Ge/Si(100) 1000nm Epi wafer 100mm

£800

1 in stock

Category:

Description

Description:
1 micron thick germanium (Ge) epilayer grown on a single side polished standard Si(100) substrate by reduced pressure chemical vapour deposition.

Specifications:
Epilayer: Ge; Epilayer thickness: 1000nm; Doping: undoped; Dopant: NA

Substrate: Si; Orientation: (100); Offcut: 0 deg; Doping: p- (B); Resistivity: 1-20 Ohm cm; Thickness: 525 um; Diameter: 100mm

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