3C-SiC/Si(100) 300nm Epi wafer 100mm – Quarter


1 in stock



Epilayer: 3C-SiC; Epilayer thickness: 300nm; Doping: undoped; Dopant: NA

Substrate: Si; Orientation: (100); Offcut: 0 deg; Doping: p- (B); Resistivity: 1-20 Ohm cm; Thickness: 525 um; Diameter: 100mm

For more information on the properties of this epi wafer please contact us.


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